j111-j112-j113-n-channel-silicon-field-effect-transistors.pdf

Product Description

The J111, J112, and J113 are symmetrical silicon n-channel junction FETs in plastic TO-92 envelopes, intended for applications such as analog switches, choppers, and commutators.

Key Features

High speed switching, interchangeability of drain and source connections, and low RDS on at zero gate voltage.

Quick Reference Data

Drain-source voltage: 40 V, Drain current: 400 mA, Total power dissipation: 400 mW, Gate-source cut-off voltage: 0.5 V.

Ratings

Limiting values include drain-source voltage, gate-source voltage, gate-drain voltage, gate forward current, total power dissipation, storage temperature range, and junction temperature.

Manual:

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Pricing & Distributors: https://www.datasheets360.com/part/detail/j112/-3252120524442469428/

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