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RENESAS HAT3O06R Silicon N Channel P Channel Power MOS FET High Speed Power Switching

renesas-hat3o06r-silicon-n-channel-p-channel-power-mos-fet-high-speed-power-switching.pdf

Overview

This datasheet describes the RENESAS HAT3O06R, a silicon N-channel and P-channel power MOS FET designed for high-speed power switching applications.

Features

The device features low on-resistance, 4 V gate drive capability, low drive current, and high-density mounting.

Package and Ratings

The device is packaged in an SOP-8 (FP-8DAV) package and has absolute maximum ratings for drain to source voltage, gate to source voltage, drain current, and channel temperature.

Electrical Characteristics

The datasheet provides detailed electrical characteristics for both N-channel and P-channel devices, including breakdown voltages, leak currents, on-state resistance, and capacitance.

Manual:

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Pricing & Distributors: https://www.datasheets360.com/part/detail/hat3006r-el-e/8760272637798647723/

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