This datasheet describes the RENESAS HAT3O06R, a silicon N-channel and P-channel power MOS FET designed for high-speed power switching applications.


The device features low on-resistance, 4 V gate drive capability, low drive current, and high-density mounting.

Package and Ratings

The device is packaged in an SOP-8 (FP-8DAV) package and has absolute maximum ratings for drain to source voltage, gate to source voltage, drain current, and channel temperature.

Electrical Characteristics

The datasheet provides detailed electrical characteristics for both N-channel and P-channel devices, including breakdown voltages, leak currents, on-state resistance, and capacitance.


Chat: Powered By VoiceSphere

Pricing & Distributors:

Related Posts
No Thoughts on RENESAS HAT3O06R Silicon N Channel P Channel Power MOS FET High Speed Power Switching