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RENESAS HAT2139H Silicon N Channel Power MOS FET Power Switching

renesas-hat2139h-silicon-n-channel-power-mos-fet-power-switching.pdf

Overview

This datasheet describes the RENESAS HAT2139H, a silicon N-channel power MOS FET designed for power switching applications.

Features

The device features low drive current, high density mounting, and low on-resistance (Rds(on) = 9 mΩ typ. at Vgs = 10 V).

Electrical Characteristics

The datasheet provides detailed electrical characteristics, including absolute maximum ratings, electrical characteristics, and typical output and transfer characteristics.

The device is capable of 7 V gate drive and has a high density mounting package (LFPAK).

Manual:

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Pricing & Distributors: https://www.datasheets360.com/part/detail/hat2139h-el-e/1371323569511371457/

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