Overview
This datasheet describes the RENESAS HAT2139H, a silicon N-channel power MOS FET designed for power switching applications.
Features
The device features low drive current, high density mounting, and low on-resistance (Rds(on) = 9 mΩ typ. at Vgs = 10 V).
Electrical Characteristics
The datasheet provides detailed electrical characteristics, including absolute maximum ratings, electrical characteristics, and typical output and transfer characteristics.
The device is capable of 7 V gate drive and has a high density mounting package (LFPAK).
Manual:
Chat: Powered By VoiceSphere
Pricing & Distributors: https://www.datasheets360.com/part/detail/hat2139h-el-e/1371323569511371457/
