N-Channel Switch

This device is designed for digital switching applications where very low on resistance is required.

Absolute Maximum Ratings

The device has a maximum drain-gate voltage of 25V, gate-source voltage of ±25V, and forward gate current of 10mA.

Electrical Characteristics

The device has a gate-source breakdown voltage of 25V, gate-source cutoff voltage of 3.0V, and drain-source on resistance of 6.0Ω.

Thermal Characteristics

The device has a total device dissipation of 1.6W, derate above 25°C, and thermal resistance, junction to case of 125°C/W.

The datasheet also provides typical characteristics, including graphs for parameter interactions, drain-source voltage, gate-source voltage, and noise voltage vs frequency.


Chat: Powered By VoiceSphere

Pricing & Distributors: https://www.datasheets360.com/part/detail/j108d27z/-4413644901352239883/

Related Posts
No Thoughts on FARRCHLD SEMICONDUCTOR” J108/J109/J110/MMBFJ108