1gb-e-die-ddr2-1066-sdram-specification-by-samsung-electronics.pdf

The datasheet titled “1Gb E-die DDR2-1066 SDRAM Specification” comprehensively details Samsung’s DDR2 SDRAM offerings, namely the models K4T1GO84QE and K4T1GI64QE. These memory modules come in 60-ball and 84-ball FBGA (Fine Ball Grid Array) package options. They are also noted for being environmentally considerate, complying with Lead-Free and Halogen-Free (RoHS) standards. The document contains 44 pages and is referenced with the revision number 1.1 issued in July 2009.

This crucial technical document furnishes information that Samsung may alter without prior notice, and users are advised to contact their nearest Samsung office for updates or additional details. The products described within this datasheet are expressly not designed for high-risk environments such as life support or military applications; Samsung disclaims any use in such fields, highlighting the potential for catastrophic failure and harm.

Furthermore, the datasheet outlines comprehensive technical details for these DDR2 SDRAM components. The

Table of Contents

enumerates the different sections of the datasheet:

  • Ordering Information
  • Key Feature Summary
  • Package Pinout and Mechanical Dimension & Addressing for both x8 and x16 packages
  • Input/Output Functional Descriptions
  • DDR2 SDRAM Addressing Details
  • Absolute Maximum Ratings and Optimal Operating Conditions
  • Electrical Parameters and IDD Specifications
  • Input/Output Capacitance
  • Electrical Characteristics & AC Timing specific to DDR2-1066

Within the Key Feature section, the datasheet is likely to present the main advantages and innovations associated with these memory models. The Package Pinout sections provide precise physical and electrical configurations crucial for designers in integrating these modules into their hardware systems. The datasheet also addresses Absolute Maximum Ratings to prevent operational damage from exceeding these limits. Specific attention is given to the Operating Conditions, outlining the optimal temperature range and power requirements necessary for stable performance.

Lastly, there is reference to AC and DC characteristics, IDD specifications, and Electrical Characteristics & AC Timing, which detail the power consumption parameters and timing requirements that are key for ensuring compatibility with intended applications.

It is notable that the document ensures to cover in-depth considerations like DDR2 SDRAM addressing, electrical specifications, and timing information, tailored for technical experts who require thorough understanding of DDR2-1066 applications in design and implementation.

References:

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