UTC X104IA High Gain NPN Silicon Transistor Datasheet

Category: Electronics, Transistors, Unisonic Technologies Co Ltd

Overview of UTC X104IA High Gain NPN Silicon Transistor

The datasheet provides detailed specifications and information for the UTC X104IA high gain NPN silicon transistor. The device is characterized by high collector-emitter voltage (VCEV) of 80V and is capable of handling pulse currents up to 20 amps.

Product Features and Ordering Information

Features highlighted for the X104IA transistor include a high gain band capable of supporting a large pulse current of up to 20 amps and a collector-emitter voltage of 80V. The datasheet notes the availability of a lead-free (Pb-free) plating option, with product numbers: X1049AL-T92-B and X1049AL-T92-K, indicating the environmental consideration in manufacturing.

The transistor comes in a TO-92 package, and there are different packing types like Tape Box (labelled B) and Bulk (labelled K). The product can come with normal plating or lead-free plating indicated as ‘L’.

Absolute Maximum Ratings

The datasheet sets out the absolute maximum ratings, which define the limits of the device’s capabilities and include parameters such as collector-base voltage (VCBO), collector-emitter voltage (VCEO), emitter-base voltage (VEBO), collector current (IC), base current (IB), power dissipation (Pc), and the respective maximum ratings for junction, operating, and storage temperature. These ratings serve as a guide to avoid permanent damage to the transistor and identify safe operating conditions.

Electrical Characteristics

Various electrical characteristics are specified, providing a detailed look at the performance under certain test conditions. Parameters such as collector-base breakdown voltage (VCBO), collector-emitter breakdown voltage (VCEO, VCER, VCEV), emitter-base breakdown voltage (VEBO), collector cut-off current (ICBO), emitter cut-off current (IEBO), collector-emitter saturation voltage (VCE(SAT)), base-emitter saturation voltage (VBE(SAT)), base-emitter turn-on voltage (VBE(on)), DC current gain (hFE), transition frequency (f), output capacitance (Cobo), turn-on time (tON), and turn-off time (tOFF) are covered, with details on minimum, typical, and maximum values for these parameters.

Note: Measurements for saturation voltage, base-emitter voltage, and DC current gain are conducted under pulsed conditions to mitigate thermal effects. The pulse width is specified at 300μs with a duty cycle not exceeding 2%.

This datasheet is a valuable resource for engineers and professionals involved in the design and selection of electronic components, particularly high gain NPN silicon transistors, who require detailed specifications for performance characteristics and packaging options.

Manufacturer Information

The datasheet is published by Unisonic Technologies Co., Ltd. (UTC), with the document number QW-R201-061. It denotes that the content is taken from pages 1 and 2 of a larger document. The last update to the document was issued in 2008. The full datasheet and additional resources are available at the UTC official website.