This datasheet describes the ULJISST308 series of single N-channel high-frequency JFET amplifiers, which are direct replacements for the Siliconix U/JISST308 series.
The devices offer outstanding high-frequency gain (Gpg) of 11.5 dB and low high-frequency noise (NF) of 2.7 dB.
Absolute Maximum Ratings
The absolute maximum ratings include storage temperature (-55 to 150°C), junction operating temperature (-55 to 150°C), and maximum power dissipation (350 mW for JISST and 500 mW for U).
Electrical Characteristics
The devices have a gate to source breakdown voltage (BVgs) of 25 V, gate to source forward voltage (VGs(F)) of 0.7 to 1.15 V, and drain to source on resistance (rosion) of 35 Ω.
They also feature a high power gain (Gpg) of 11.5 dB at 450 MHz and a low noise figure (NF) of 2.7 dB at 450 MHz.
Manual:
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