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TOSHIBA YTS2222 Transistor Datasheet

toshiba-yts2222-transistor-datasheet.pdf

Overview

The YTS2222 is a silicon NPN epitaxial transistor designed for general purpose use, medium-speed switching, and audio to VHF frequency applications.

Key Features

DC current gain specified, low collector-emitter saturation voltage (Vce(sat) = 1.6V max @ Ic = 50mA), and complementary to YTS2907.

Absolute Maximum Ratings

Collector-base voltage: 600V, collector-emitter voltage: 600V, emitter-base voltage: 5V, collector current: 2A, base current: 371mA, and power dissipation: 200mW.

Manual:

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Pricing & Distributors: https://www.datasheets360.com/part/detail/yts2222/-7710201894348059851/

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