The IN4454 is a silicon switching diode designed for general purpose applications where performance and switching speed are important. It is available in a DO-35 glass package and features a six sigma quality metallurgically bonded construction with Sigma BondTM plating for problem-free solderability.
Key Features
The diode has a peak inverse voltage of 75V, an average rectified current of 200mA, and a continuous forward current of 300mA. It also has a peak surge current of 1.0A and a power dissipation of 500mW at a temperature of 50°C.
Electrical Characteristics
The diode has a forward voltage of 1.0V at 10mA, a breakdown voltage of 75V, and a reverse leakage current of 0.1μA at 50V. It also has a capacitance of 2.0pF at 0V and a reverse recovery time of 2.0nSec.
The diode is available up to JANTXV-1 levels and “S” level screening is available to Source Control Drawings.
Manual:
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