Overview
This datasheet describes the HAT2053M, a silicon N-channel power MOS FET designed for power switching applications.
Features
The device features low on-resistance, low drive current, and high density mounting. It can be driven from a 3V source and has a 2.5V gate drive.
Package and Ratings
The device is available in a TSOP-6 package and has absolute maximum ratings of 20V for drain to source voltage and 6.1V for gate to source voltage.
The device also has electrical characteristics such as drain to source breakdown voltage, gate to source leak current, and static drain to source on-state resistance.
Manual:
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