Overview
This datasheet describes the HAT2033RMHA and T2033RJ Silicon N Channel Power MOS FET, designed for high-speed power switching applications, particularly in the automotive industry.
Key Features
Low on-resistance, capable of 4 V gate drive, and high-density mounting in a SOP-8 package.
Electrical Characteristics
The device has a drain to source breakdown voltage of 60 V, gate to source breakdown voltage of +20 V, and a drain current of up to 4 A.
Other key characteristics include static drain to source on-state resistance, input capacitance, output capacitance, and reverse transfer capacitance.
Manual:
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