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Silicon N Channel Power MOS FET High Speed Power Switching

silicon-n-channel-power-mos-fet-high-speed-power-switching.pdf

Overview

This datasheet describes the HAT2033RMHA and T2033RJ Silicon N Channel Power MOS FET, designed for high-speed power switching applications, particularly in the automotive industry.

Key Features

Low on-resistance, capable of 4 V gate drive, and high-density mounting in a SOP-8 package.

Electrical Characteristics

The device has a drain to source breakdown voltage of 60 V, gate to source breakdown voltage of +20 V, and a drain current of up to 4 A.

Other key characteristics include static drain to source on-state resistance, input capacitance, output capacitance, and reverse transfer capacitance.

Manual:

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Pricing & Distributors: https://www.datasheets360.com/part/detail/hat2033r/-1142018383735051612/

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