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SILICON DIFFUSED TYPE ZENER DIODE U1ZB12-UIZB5I

silicon-diffused-type-zener-diode-u1zb12-uizb5i.pdf

This datasheet describes the characteristics of a silicon diffused type zener diode, specifically the U1ZB12-UIZB5I model.

Key Features:

Average power dissipation: 1.0 W
Zener voltage range: 12-390 V
Surface mounting plastic mold package

Maximum Ratings:

Power dissipation: 1.0 W
Junction temperature: 150°C
Storage temperature range: -40°C to 150°C

The diode is suitable for voltage regulation and transient suppression applications.

Manual:

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Pricing & Distributors: https://www.datasheets360.com/part/detail/u1zb18te12r/7885497605665316466/

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