silicon-diffused-type-zener-diode-u1zb12-u1zb5i.pdf

Overview

The datasheet presents information on a Silicon Diffused Type Zener Diode specifically designed for constant voltage regulation and transient suppression. These diodes are suitable for surface mounting with a plastic mold package, and the series includes various models with Zener voltage (Vz) ranging from 12 to 390 volts.

Maximum Ratings

Power Dissipation (PD): The diode is capable of handling an average power dissipation of 1.0 watts, ensuring that it can maintain stable performance under specified conditions.
Junction Temperature (Tj): The operational junction temperature range for the diode is from -40°C to 150°C, allowing its use in various environments without compromise in functionality.
Storage Temperature Range (Tstg): The device is rated for storage temperatures from -40°C to 150°C, guaranteeing its integrity when not in use.

Physical Characteristics

The diode’s package sports an anode and cathode identification for quick recognition, with the cathode marked for ease of installation. Its dimensions (unit in mm) are provided to ensure compatibility with standard soldering pads and the intended PCB footprint. The device is also remarkably lightweight at 0.06g, which is beneficial for applications where weight is a constraint.

Marking and Packaging

Each diode is marked with a type code (e.g., U1ZB330-X), where “X” represents the lot number. Additionally, the manufacturing month and year are encoded in the mark, with the month starting from the alphabet’s fourth character and the year indicated by the last number of the Christian era.

Manual:

Chat: Powered By VoiceSphere

Pricing & Distributors: https://www.datasheets360.com/part/detail/u1zb27te12l/2417188845660937098/

Related Posts
No Thoughts on SILICON DIFFUSED TYPE ZENER DIODE U1ZB12-U1ZB5I