rohs-compliant-metal-gate-rf-silicon-fet.pdf

Overview

This datasheet describes a 20W, 28V, 1GHz single-ended RF FET with a metal gate and gold metallization.

Key Features

Simplified amplifier design and low Crss make it suitable for broadband applications.

Low noise and high gain (10 dB minimum) make it ideal for VHF/UHF communications from 50 MHz to 1 GHz.

Applications

VHF/UHF communications from 50 MHz to 1 GHz.

Electrical Characteristics

Includes breakdown voltage, drain current, gate leakage current, gate threshold voltage, forward transconductance, and more.

Manual:

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Pricing & Distributors: https://www.datasheets360.com/part/detail/d2010ukg4/3319345656407682670/

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