Overview
The RENESAS HAT2ZOOR is a silicon N-channel power MOS FET designed for power switching applications.
Key Features
Capable of 8 V gate drive, low drive current, and high density mounting. It has a low on-resistance of 22 mΩ (typ.) at VGS = 10 V.
Absolute Maximum Ratings
The device has a maximum drain to source voltage of 100 V, gate to source voltage of ±20 V, and drain current of 64 A (pulse).
Electrical Characteristics
The MOS FET has a drain to source breakdown voltage of 100 V, gate to source leak current of 0 A, and static drain to source on-state resistance of 22 mΩ (typ.).
Manual:
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