Cropped 500x500 2.png

RENESAS HAT2175H Silicon N Channel Power MOS FET Power Switching

renesas-hat2175h-silicon-n-channel-power-mos-fet-power-switching.pdf

Overview

The RENESAS HAT2175H is a silicon N-channel power MOS FET designed for power switching applications.

Features

This device features low drive current, high density mounting, and low on-resistance (RDS(on) = 33 mΩ typ. at VGS = 10 V).

Electrical Characteristics

The device has a drain to source breakdown voltage of 100 V, a gate to source breakdown voltage of 20 V, and a drain current of 15 A.

Main Characteristics

The device has a power VS temperature derating, a maximum safe operation area, and typical output and transfer characteristics.

Manual:

Chat: Powered By VoiceSphere

Pricing & Distributors: https://www.datasheets360.com/part/detail/hat2175h-el-e/5492319866601574489/

Wool Women Whitefly Water Scarcity Water Fern Water Veterinary Vermicompost Variety Varieties Vaccine University Tuber Crops Tropics Training Programs Training tomato tomaro Tobacco Tissue Culture test2 Test Temperature Temperate Fruit Technologies Sugarcane Sugar Stresses stall Sprinkler Spawning Soyabean Varieties Sorghum Solar Soil Survey Soil Small millets Shrimp Aquaculture Sheep Breed Self-sufficiency Seed Spices Seed production Seasons sdfgdhmjh Rural Awareness Rootstock Rooftop Rice varieties Rice Research Rice
Top Categories
Popular Manuals
MIL-HDBK-103BG: LIST OF STANDARD MICROCIRCUIT DRAWINGSMetallized Polyester Film Capacitors (MKT) – Series B32520 B32529Super Fast Recovery Diode DIFL4O DatasheetUA741 General-Purpose Single Operational AmplifiersJST HVQ Connector 2.5mm Pitch Board-to-Board Connectors
Related Posts
No Thoughts on RENESAS HAT2175H Silicon N Channel Power MOS FET Power Switching