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RENESAS HAT2175H Silicon N Channel Power MOS FET Power Switching

renesas-hat2175h-silicon-n-channel-power-mos-fet-power-switching.pdf

Overview

The RENESAS HAT2175H is a silicon N-channel power MOS FET designed for power switching applications.

Features

This device features low drive current, high density mounting, and low on-resistance (RDS(on) = 33 mΩ typ. at VGS = 10 V).

Electrical Characteristics

The device has a drain to source breakdown voltage of 100 V, a gate to source breakdown voltage of 20 V, and a drain current of 15 A.

Main Characteristics

The device has a power VS temperature derating, a maximum safe operation area, and typical output and transfer characteristics.

Manual:

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Pricing & Distributors: https://www.datasheets360.com/part/detail/hat2175h-el-e/5492319866601574489/

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