Overview
The RENESAS HAT2174H is a silicon N-channel power MOSFET designed for power switching applications.
Key Features
Capable of 8 V gate drive, low drive current, high density mounting, and low on-resistance (Rpston = 21 mΩ typ. at Vgs = 10 V).
Electrical Characteristics
The device has a drain to source breakdown voltage of 100 V, gate to source breakdown voltage of ±20 V, and a static drain to source on-state resistance of 21 mΩ.
It also features a low gate to source leak current, zero gate voltage drain current, and a high forward transfer admittance.
The device is suitable for high-frequency switching applications due to its low input capacitance, output capacitance, and reverse transfer capacitance.
Manual:
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