Overview
The HAT216OH is a silicon N-channel power MOS FET designed for power switching applications.
Key Features
Capable of 4.5 V gate drive, low drive current, and high density mounting, with a low on-resistance (RpS(on)) of 2.1 mΩ (typ. at VGs = 10 V).
Electrical Characteristics
The device has a drain to source breakdown voltage of 20 V, gate to source breakdown voltage of +20 V, and a static drain to source on-state resistance of 2.1 mΩ (typ.).
Other key characteristics include a gate to source leak current of 2.8 mA (max.), zero gate voltage drain current of 2.3 mA (max.), and a forward transfer admittance of 78 (typ.).
Manual:
Chat: Powered By VoiceSphere
Pricing & Distributors: https://www.datasheets360.com/part/detail/hat2160h/-1951104078556645757/
