This datasheet describes the RENESAS HAT2139H, a silicon N-channel power MOS FET designed for power switching applications.
Key Features:
- Capable of 7 V gate drive
- Low drive current
- High density mounting
- Low on-resistance (Rpston) of 9 mΩ typ. (at VGs = 10 V)
Absolute Maximum Ratings
The device has a maximum drain to source voltage of 40 V, gate to source voltage of ±20 V, and drain current of 20 A.
Electrical Characteristics
The device has a drain to source breakdown voltage of 40 V, gate to source breakdown voltage of ±20 V, and a static drain to source on-state resistance of 9 mΩ typ.
Manual:
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