Overview
This datasheet describes the RENESAS HAT2033R and HAT2033RJ Silicon N Channel Power MOS FET, designed for high-speed power switching applications, particularly in the automotive industry.
Features
The device features low on-resistance, 4 V gate drive capability, and high-density mounting.
Electrical Characteristics
The datasheet provides detailed electrical characteristics, including absolute maximum ratings, electrical characteristics, and typical characteristics such as transfer and output characteristics.
Applications
The device is suitable for automotive applications, with a focus on high-speed power switching.
Manual:
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