Overview
The datasheet details a series of N-Channel POWER MOSFETs encapsulated in a hermetic isolated JEDEC TO-258AA package. These transistors are designed to accommodate a wide range of voltages from 100V to 500V, and current capacities up to 35 Amps. Options are available with or without Zener Gate Clamp Protection. Specifically designed to meet Military requirements, they are well-suited for compact, high-performance, and reliable applications in fields such as switching power supplies, motor controls, inverters, choppers, audio amplifiers, and high energy pulse circuits.
Key Features
- Isolation in a hermetic metal package for reliability
- Optional bilateral Zener gate protection for voltage spikes
- Fast switching and low drive current for efficiency
- Easy paralleling for increased power
- Low on-state resistance (Rds(on)) to minimize power loss
- Variants screened to MIL-S-19500 standards
Maximum Ratings and Part Numbers
The datasheet lists different part numbers indicating whether the MOSFET comes with Zener Gate Clamp Protection (OM6105SC through OM6108SC) or without (OMGO05SC through OMGO08SC). The voltage ratings range from 100V for part numbers OMGO05SC/OM6105SC to 500V for OMGO08SC/OM6108SC, with respective on-state current handling from 13A to 35A.
Schematic Description
Schematics are provided to illustrate configurations with and without Zener clamps, identifying the drain, gate, source, and optional Zener diodes for gate protection.
Electrical Characteristics
The datasheet presents detailed electrical properties for parts OM6105SC/OMGO05SC and OM6106SC/OMGO06SC, such as drain-source breakdown voltage, gate-threshold voltage, gate body leakage, zero gate voltage drain current, on-state drain current, static drain-source on-state voltage, and static drain-source on-state resistance. Characteristics are given under different test conditions and temperatures, providing design engineers with critical operational parameters.
Dynamic Parameters and Body-Drain Diode Ratings
Dynamic electrical parameters like forward transconductance, input capacitance, output capacitance, reverse transfer capacitance, turn-on delay time, rise time, turn-off delay time, and fall time are specified, offering insight into the switching performance of the MOSFETs. The datasheet also details the body-drain diode ratings and characteristics pertinent to the internal diode, describing parameters such as continuous source current, diode forward voltage, and reverse recovery time under various conditions.
Pulse Test Conditions
The pulse tests described specify a pulse width of 300 microseconds and a duty cycle of 2%, serving as a standard for measuring and comparing the provided electrical characteristics.
References:
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