performance-specification-sheet---semiconductor-device-diode-silicon-low-noise-voltage-regulator.pdf

Overview

The document outlines the specification for low-noise voltage regulator diodes in MIL-PRF-19500/435N, replacing the previous MIL-PRF-19500/435M specification and recognised by the United States Department of Defense. The devices range from 1N4099 to 1N4135, and 1N4614 to 1N4627 with C and D tolerance suffixes and come in various levels of product assurance: JAN, JANTX, JANTXV, JANS for encapsulated, and JANHC and JANKC for unencapsulated.

Scope and Performance Requirements

The diodes specified by this document cater to performance needs for 500 milliwatt silicon-based low-noise voltage regulators with voltage tolerances of 5%, 2%, and 1%. They are available in multiple package outlines, including the DO-35, DO-213AA, and various die and UB configurations (figures 1 through 5). All are assured to meet the stringent quality levels defined within MIL-PRF-19500.

Maximum Ratings

The diodes operate within certain constraints to maintain integrity and functionality. The maximum power dissipation for the DO-35 is 500 mW at a lead temperature (TL) of 50°C with specific derating beyond 175°C. The DO-213AA also has similar power dissipation, but at an environmental condition (TEC) of 125°C. Other configurations like the UB package and the unencapsulated (die) also have restrictions in place for power and storage temperatures, all converging around 500 mW power dissipation with variable derating conditions depending on their operational and storage temperature parameters.

Comments and Contact Information

Suggestions, questions, or comments regarding the specification can be sent to DLA Land and Maritime, ATTN: VAC, or via email to Semiconductor@dlamil, with a reminder to verify the current contact information through the ASSIST Online database for any updates.

Manual:

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Pricing & Distributors: https://www.datasheets360.com/part/detail/jan1n4109ur-1/1292671242153489610/

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