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MIL-PRF-19500/308D: Semiconductor Device, Diode, Silicon, Power Rectifier, Fast-Recovery Types 1N3909, 1N3910, 1N3911, 1N3912, 1N3913 R and A Versions JAN, JANTX, and JANTXV

mil-prf-19500308d-semiconductor-device-diode-silicon-power-rectifier-fast-recovery-types-1n3909-1n3910-1n3911-1n3912-1n3913-r-and-a-versions-jan-jantx-and-jantxv.pdf

Overview

This specification covers the performance requirements for silicon, semiconductor fast recovery, power rectifier diodes. It provides three levels of product assurance for each device type as specified in MIL-PRF-19500.

Physical Dimensions and Maximum Ratings

The physical dimensions are shown in Figure 1 (DO-5), and the maximum ratings include voltage, current, and temperature specifications.

Electrical Performance Characteristics

The electrical performance characteristics include rectifier voltage, reverse voltage, and surge current ratings. The devices shall be constructed to meet the applicable requirements of MIL-PRF-19500 and this document.

Verification and Inspection

The verification and inspection requirements include qualification inspection, screening, and conformance inspection. The inspection requirements are classified into groups A, B, C, and E, with specific tests and conditions for each group.

Manual:

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