Low Power P-Channel Field Effect Transistor (FET) Switches Product Catalog

Category: Electronics, Solitron Devices Inc, Transistors

Overview of Low Power P-Channel FETs Product Catalog

A comprehensive catalog of low power P-Channel Field Effect Transistors (FETs) is presented, offering a range of switches characterized by differing electrical properties, including transistors variants such as the 2N3382, 2N3993, 2N5116, and J177, among others. The detailed specifications of these FETs include minimum and maximum values for parameters like gate-source breakdown voltage (BVgss), input capacitance (Cies), threshold voltage (Vgs), as well as drain currents both at the zero gate voltage (Idgo) and at the specified current drain-source short-circuit (Idss).

Key Electrical Characteristics

Each transistor is defined by various performance metrics crucial for design considerations:

On-resistance (R_on) – The maximum resistance when the FET is on, given in micro-mhos, with values such as 300 for the 2N3382 and others.
Turn-on time (T_on) and Turn-off time (T_off) – The maximum switching times in nanoseconds, illustrating the FET’s response times to signals with respective examples ranging from 65 ns turn-on time for 2N3994 to 90 ns for 2NSI15.

The first two pages of the datasheet provide a tabulated list of FET models, emphasizing their package styles (e.g. FP7.3, FP5.3), as well as critical parameters necessary for circuit integration. Notably, the datasheet specifies a range of gate-source voltage (BVgss), from 30V up to 25V for different transistor types, such as the UC805. Input capacitance (Cies) is typically 116 pF for models like 2N3382, and reverse gate-source leakage current (Igs) is typically in the nanoampere range.

Transistor Types and Packaging

Transistors like the 2N5116′ and J175 with specific Type Style Numbers (e.g., 92 for J175) are highlighted, showcasing their geometric configurations. Several devices are noted to be compatible with military standards, indicated by their qualification for JAN, JTX, and JTXV levels.

Furthermore, packaging options such as the epoxy TO-92 package are mentioned for certain devices, signifying a common alternative with similar electrical properties to traditional configurations. The notation of prefixes like KK and KB, correspond to standard and formed leads packages, respectively, providing additional flexibility for different assembly requirements.

The datasheet signifies a robust product lineup intended to support a wide array of applications requiring low power FET switches, with precise selection criteria based on various electrical specifications. Designers and engineers are provided with the information necessary to select the appropriate P-Channel FET for their specific application needs.