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K4T1GO84QE K4T1GI64QE DDR2 SDRAM 1Gb E-die DDR2-1066 SDRAM Specification

k4t1go84qe-k4t1gi64qe-ddr2-sdram-1gb-e-die-ddr2-1066-sdram-specification.pdf

This datasheet provides specifications for the K4T1GO84QE and K4T1GI64QE DDR2 SDRAM devices, which are 1Gb E-die DDR2-1066 SDRAM devices with 60/84-ball FBGA packages.

The devices are organized as 16Mbit x 8 I/Os or 8Mbit x 16 I/Os, with 8 banks, and operate at a speed of 1066Mb/s/pin.

Key Features:

Posted CAS with additive latency, write latency, and read latency; programmable CAS latency and additive latency; burst length of 4 or 8; and bi-directional differential data-strobe.

Operating Conditions:

Single 1.8V ± 0.1V power supply and 1.8V ± 0.1V VDDQ; operating temperature range of -40°C to 95°C.

The devices are RoHS compliant, lead-free, and halogen-free, and are available in 60-ball FBGA (x8) and 84-ball FBGA (x16) packages.

Manual:

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Pricing & Distributors: https://www.datasheets360.com/part/detail/k4t1g084qe-hcf80/1235989515384921113/

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