Cropped 500x500 2.png

K4T1GO84QE K4T1GI64QE DDR2 SDRAM 1Gb E-die DDR2-1066 SDRAM Specification

k4t1go84qe-k4t1gi64qe-ddr2-sdram-1gb-e-die-ddr2-1066-sdram-specification.pdf

This datasheet provides specifications for the K4T1GO84QE and K4T1GI64QE DDR2 SDRAM devices, which are 1Gb E-die DDR2-1066 SDRAM devices with 60/84-ball FBGA packages.

The devices are organized as 16Mbit x 8 I/Os or 8Mbit x 16 I/Os, with 8 banks, and operate at a speed of 1066Mb/s/pin.

Key Features:

Posted CAS with additive latency, write latency, and read latency; programmable CAS latency and additive latency; burst length of 4 or 8; and bi-directional differential data-strobe.

Operating Conditions:

Single 1.8V ± 0.1V power supply and 1.8V ± 0.1V VDDQ; operating temperature range of -40°C to 95°C.

The devices are RoHS compliant, lead-free, and halogen-free, and are available in 60-ball FBGA (x8) and 84-ball FBGA (x16) packages.

Manual:

Chat: Powered By VoiceSphere

Pricing & Distributors: https://www.datasheets360.com/part/detail/k4t1g084qe-hcf80/1235989515384921113/

Wool Women Whitefly Water Scarcity Water Fern Water Veterinary Vermicompost Variety Varieties Vaccine University Tuber Crops Tropics Training Programs Training tomato tomaro Tobacco Tissue Culture test2 Test Temperature Temperate Fruit Technologies Sugarcane Sugar Stresses stall Sprinkler Spawning Soyabean Varieties Sorghum Solar Soil Survey Soil Small millets Shrimp Aquaculture Sheep Breed Self-sufficiency Seed Spices Seed production Seasons sdfgdhmjh Rural Awareness Rootstock Rooftop Rice varieties Rice Research Rice
Top Categories
Popular Manuals
Power-one Q2D Series – Quarter-Brick DCIDC Converter 48V Input Dual OutputPrecision Thin Film Chip Resistors PFC Series DatasheetMIL-HDBK-103BG: LIST OF STANDARD MICROCIRCUIT DRAWINGSPrecision Low-Voltage Micropower Operational Amplifier OP9OMetallized Polyester Film Capacitors (MKT) – Series B32520 B32529
Related Posts
No Thoughts on K4T1GO84QE K4T1GI64QE DDR2 SDRAM 1Gb E-die DDR2-1066 SDRAM Specification