This datasheet describes the 2Gb DDR3 SDRAM B-die device, which is organized as a 64Mbit x 4 I/Os x 8 banks, 32Mbit x 8 I/Os x 8 banks, or 8Mbit x 16 I/Os x 8 banks device.

Key Features

The device achieves high-speed double-data-rate transfer rates of up to 1600Mb/sec/pin (DDR3-1600) and complies with JEDEC standard 1.5V ± 0.075V power supply.

It features posted CAS, programmable CWL, internal (self) calibration, programmable CAS latency, on-die termination using ODT pin, and asynchronous reset.


The device is available in 78-ball FBGA (x4/x8) and 96-ball FBGA (x16) packages, which are lead-free and halogen-free, complying with RoHS standards.


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