Product Overview
The datasheet presents detailed information on IBM’s 4Mb and 8Mb Synchronous Static Random Access Memories (SRAMs), which operate in Synchronous Pipeline Mode. These memory devices are high-performance CMOS SRAMs with wide I/O capabilities, achieving rapid cycle times as low as 3ns.
Key Features
Memory Organizations: The 8Mb SRAMs are available in 256K x 36 or 512K x 18 configurations while the 4Mb variants come in 128K x 36 or 256K x 18 formats.
Technology: They utilize 0.25 Micron CMOS technology for efficiency and performance.
Compatibility: The devices offer Registered Outputs, Common I/O, and are compatible with HSTL (High-Speed Transceiver Logic) I/O interfaces.
Byte Write Capability and Global Write Enable: Provides flexibility in memory operations.
Power Supply: These SRAMs operate with a single +2.5V power supply, and also specify requirements for grounds and various voltage references such as 1.5V, 1.8V VDDQ, and 0.90V VREF.
Operational Modes: Features Synchronous Pipeline Mode operation with Self-Timed Late Write and a Synchronous Power Down Input for enhanced control during read/write operations. An Asynchronous Output Enable feature is also included.
Control Inputs: The memory devices use a single Differential HSTL Clock, and include Registered Addresses, Write Enables, Synchronous Select, and Data Ins for efficient synchronization.
Boundary Scan: Supports a limited set of JTAG 1149.1 functions for testing and verification.
Packaging: Provided in a 7 x 17 Bump Ball Grid Array Package conforming to JEDEC standards, ensuring compatibility and easy integration into existing systems.
Functionality and Pinouts
The datasheet provides Top View diagrams for both the x36 and x18 Ball Grid Array (BGA) Pinouts, illustrating the precise physical arrangement of VDD, VSS, and various signal pins on the memory chips. It guides the user on how to connect M1 and M2, the clock mode pins, to VSS and VDD accordingly for proper operation.
Availability and Contact Information
This document is a preliminary release from IBM (dated 12/13/00) and serves as a technical reference for the memory devices referenced with the part numbers: IBMO436A41BLAB, IBMO418A41BLAB, IBMO418A81BLAB, and IBMO436A81BLAB. For more comprehensive details and usage provisions, users are advised to consult further sections of the datasheet or to contact IBM Corporation, as noted by the document’s rights and permissions disclaimer.
References:
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