Hynix 512Mb DDR SDRAM Datasheet Rev. 1.2

Category: Electronics, Memory ICS, SK Hynix

Hynix 512Mb DDR SDRAM Overview

The provided document is a datasheet for Hynix’s 512Mb DDR SDRAM, offering details on product specifications, features, and potential revisions. The datasheet is meant for general informational purposes and may be subject to changes not documented within. The semiconductor manufacturer, Hynix, does not accept responsibility for usage scenarios not explicitly outlined in this document, nor does it convey any patent licenses through publication.

Revision History Highlights

Version history of the datasheet reflects its evolution from an initial draft to the current revision. The preliminary version, tagged as revision 0.1, was released in September 2009. Subsequently, a significant update marked as release 1.0 was made available in November 2009. The datasheet was later updated to revision 1.1 in February 2011 to amend tDQSQ values specifically for DDR333. The most current version, revision 1.2 as of August 2011, includes an MRS update with an additional CL4 timing setting. This indicates the datasheet is inclusive of specifications suitable for different timing requirements and has been iteratively enhanced to improve its detail and accuracy.

Cautionary Note

It’s imperative for users to consider the advisory that Hynix Semiconductor disclaims any responsibility for the application of its circuits beyond the provisions of this datasheet. No implicit patent licenses should be inferred from the datasheet, meaning that users must independently verify patent rights if applicable.

Datasheet Application

This datasheet is essential for engineers, designers, and technical professionals who require specific information on the 512Mb DDR SDRAM produced by Hynix. It serves as a technical guideline for integrating the memory component into broader electronic systems. The document outlines the critical parameters that aid in ensuring compatibility and performance when utilizing this Hynix memory component.