High Speed PIN Diodes – GC4200 Series

Category: Diodes, Electronics, Microsemi Corp

Description

The GC4200 series comprises high-speed cathode base PIN diodes utilizing high resistivity epitaxial silicon. They are designed for RF circuits and can function as on/off elements, switches, or current-controlled resistors across UHF to Ku band frequencies. The PIN diodes come with silicon dioxide passivation for enhanced stability and reliability. These devices are a staple in high-reliability systems backed by extensive device operation hours.

Applications

These diodes are suitable for several applications such as high-speed switches in ECM systems, TR switches, channel or antenna selection switches in telecommunications, duplexers in radar systems, digital phase shifters in phased arrays, and as passive or active limiters for RF power levels. They are also applicable in attenuators, amplitude modulators, AGC attenuators, and power levelers.

Performance and Standards

Pin diodes in the GC4200 series can endure storage temperatures ranging from -65°C to +200°C and are operational from -55°C up to +150°C. They comply with, or exceed, military environmental specifications outlined in MIL-S-19500 and can operate effectively with a forward bias of as low as +10mA.

Electrical Specifications

Key specifications include a breakdown junction voltage minimum of 250 Volts for certain models, with maximum junction capacitance of 0.6 pF and a typical carrier lifetime of 100 ns. Maximum thermal resistance is noted at 500 °C/W, and series resistance at 20 mA at 1 GHz is a maximum of 100 Ohms.

Additional Notes:

Capacitance is measured at 1 MHz and -10 Volts.
Resistance is determined based on transmission loss techniques.
Availability in various case styles, including standard styles 00, 15, 30, 35, and 85, with additional styles upon request.
The specifications given are for style 30 package, though other packages are available.
Each diode type offers a balance of series resistance, junction capacitance, and carrier lifetime contingent on the application requirements.
Options for reverse polarity diodes (NIP) and high voltage PIN and NIP diodes are provided in the GC4300, GC4400, and GC4500 series, respectively.

Contact Information

Microsemi – Lowell, located at 75 Technology Drive, Lowell, MA 01851, can be contacted via telephone at (978) 442-5600 for additional details and product inquiries.