Overview
The HAT2036R is a silicon N-channel power MOS FET designed for power switching applications.
Features
Low on-resistance (Rds(on) = 12mΩ typ.), capable of 4.5 V gate drive, low drive current, high density mounting, and high speed switching (t = 60ns typ.).
Electrical Characteristics
The device has a drain to source breakdown voltage of 30 V, gate to source leak current of 1.5 μA, and a static drain to source on-state resistance of 12 mΩ.
It also features a high speed switching capability with a turn-on delay time of 35 ns, rise time of 20 ns, turn-off delay time of 35 ns, and fall time of 20 ns.
Manual:
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