Cropped 500x500 2.png

HAT2036R Silicon N Channel Power MOS FET Power Switching

hat2036r-silicon-n-channel-power-mos-fet-power-switching.pdf

Overview

The HAT2036R is a silicon N-channel power MOS FET designed for power switching applications.

Features

Low on-resistance (Rds(on) = 12mΩ typ.), capable of 4.5 V gate drive, low drive current, high density mounting, and high speed switching (t = 60ns typ.).

Electrical Characteristics

The device has a drain to source breakdown voltage of 30 V, gate to source leak current of 1.5 μA, and a static drain to source on-state resistance of 12 mΩ.

It also features a high speed switching capability with a turn-on delay time of 35 ns, rise time of 20 ns, turn-off delay time of 35 ns, and fall time of 20 ns.

Manual:

Chat: Powered By VoiceSphere

Pricing & Distributors: https://www.datasheets360.com/part/detail/hat2036r/-1030542357701568281/

Wool Women Whitefly Water Scarcity Water Fern Water Veterinary Vermicompost Variety Varieties Vaccine University Tuber Crops Tropics Training Programs Training tomato tomaro Tobacco Tissue Culture test2 Test Temperature Temperate Fruit Technologies Sugarcane Sugar Stresses stall Sprinkler Spawning Soyabean Varieties Sorghum Solar Soil Survey Soil Small millets Shrimp Aquaculture Sheep Breed Self-sufficiency Seed Spices Seed production Seasons sdfgdhmjh Rural Awareness Rootstock Rooftop Rice varieties Rice Research Rice
Top Categories
Popular Manuals
Power-one Q2D Series – Quarter-Brick DCIDC Converter 48V Input Dual OutputMIL-HDBK-103BG: LIST OF STANDARD MICROCIRCUIT DRAWINGSPrecision Thin Film Chip Resistors PFC Series DatasheetMetallized Polyester Film Capacitors (MKT) – Series B32520 B32529Precision Low-Voltage Micropower Operational Amplifier OP9O
Related Posts
No Thoughts on HAT2036R Silicon N Channel Power MOS FET Power Switching