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HAT2036R Silicon N Channel Power MOS FET Power Switching

hat2036r-silicon-n-channel-power-mos-fet-power-switching.pdf

Overview

The HAT2036R is a silicon N-channel power MOS FET designed for power switching applications.

Features

Low on-resistance (Rds(on) = 12mΩ typ.), capable of 4.5 V gate drive, low drive current, high density mounting, and high speed switching (t = 60ns typ.).

Electrical Characteristics

The device has a drain to source breakdown voltage of 30 V, gate to source leak current of 1.5 μA, and a static drain to source on-state resistance of 12 mΩ.

It also features a high speed switching capability with a turn-on delay time of 35 ns, rise time of 20 ns, turn-off delay time of 35 ns, and fall time of 20 ns.

Manual:

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Pricing & Distributors: https://www.datasheets360.com/part/detail/hat2036r/-1030542357701568281/

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