The H11GIM and H11GZM are high voltage photodarlington-type optocouplers featuring a gallium arsenide infrared emitting diode coupled with a silicon darlington connected phototransistor.
Key features include:
- High BVCEo: 100 V minimum for H11GIM and 80 V minimum for H11GZM
- High sensitivity to low input current (minimum 500% CTR at I = 1 mA)
- Low leakage current at elevated temperature (maximum 100 nA at 80°C)
These optocouplers are suitable for “safe electrical insulation” within the safety limit data and are compliant with various safety and regulatory approvals, including UL1577 and DIN EN IEC 60747-5-5.
Applications
Telephone ring detector, low input TTL interface, power supply isolation, and replacement for pulse transformers.
Manual:
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Pricing & Distributors: https://www.datasheets360.com/part/detail/h11g2m/3000530228139781971/
