The GC45O0 series are high voltage, high power NIP diodes suitable for applications up to 18 GHz. These diodes are passivated with silicon dioxide for high stability and reliability.
Key Features:
Available as packaged devices or as chips for hybrid applications, with high power handling, low loss, and low distortion.
RoHS compliant, with gold finish, and suitable for RoHS compliant assembly.
Applications:
RF circuits, switches, current controlled resistors, attenuators, and digital phase shifters.
Specifically used in TR switches, antenna selector switches, duplexers, and active limiters.
Manual:
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Pricing & Distributors: https://www.datasheets360.com/part/detail/gc4533-115/4026616000424200327/