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D2OO1UK ROHS COMPLIANT METAL GATE RF SILICON FET

d2oo1uk-rohs-compliant-metal-gate-rf-silicon-fet.pdf

This datasheet describes a 2.5W, 28V, 1GHz single-ended RF FET with a metal gate and gold metallization.

The device features a simplified amplifier design, low noise, high gain (13 dB minimum), and low Crss, making it suitable for broadband applications.

Applications

VHF/UHF communications from 50 MHz to 1 GHz.

Key Features

Low noise, high gain, and low Crss.

Suitable for broadband applications.

ROHS compliant.

Manual:

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