The A1 RF amplifier is a discrete hybrid design using thin film manufacturing processes for accurate performance and high reliability. It features low noise (2.4 dB typical), low VSWR (1.3:1 typical), and high gain (16 dB typical) over a broadband frequency range of 5 to 500 MHz.
The amplifier is available in TO-8 and Surface Mount packages, which are hermetically sealed and can be environmentally screened to MIL-STD-883 standards. The connectorized version is not RoHS compliant.
Electrical Specifications:
The amplifier has a small signal gain of 16 dB (minimum), gain flatness of ±0.2 dB (maximum), and a noise figure of 2.4 dB (maximum). It also features high reverse isolation (19 dB) and a high IP3 of +11 dBm.
Thermal Data:
The amplifier has a thermal resistance of 130°C/W and a transistor power dissipation of 0.057 W. The junction temperature rise is 7°C above the case temperature.
Manual:
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