Overview
The datasheet describes a family of high-performance CMOS Static Random Access Memories (SRAMs), specifically detailing the 8Mb variants—IBM0436A81QLAB and IBM0418A81QLAB, and the 4Mb variants—IBM0436A41QLAB and IBM0418A41QLAB. These SRAMs operate in a Synchronous Pipeline Mode and offer a range of features to accommodate various performance and design requirements.
Key Features
The SRAMs featured in this datasheet offer several key functionalities:
Memory Organization: They come in either 8Mb with 256K x 36 or 512K x 18 configurations or 4Mb with 128K x 36 or 256K x 18 configurations. Each variety is optimized for different memory density requirements.
Design and Technology: These devices are crafted using 0.25 Micron CMOS technology, enabling efficient operation. They are designed with a common I/O structure and registered outputs for ease of use.
Performance: The SRAMs can achieve rapid cycle times, up to 3.0 ns, aiding quick read/write operations. Registered addresses, write enables, synchronous select, and data inputs all increase the preciseness and reliability of memory operations.
Functionalities: Features such as Byte Write Capability, Global Write Enable, and an Asynchronous Output Enable provide flexibility in data management.
Power Management: They utilize a +3.3V power supply, with ground and low voltage differentials for VDDQ and VREF, aligning with modern low-power requirements.
Clock and Timing: Utilizing a single Differential Extended HSTL clock, these SRAMs employ a Pipeline Mode of operation. An internal buffer accommodates a one-cycle delay for write data following addresses and controls.
Interface and Testing: Adherence to HSTL input and output levels ensures compatibility with standard interfaces. For testing, these chips support Boundary Scan using a selected set of JTAG 1149.1 functions.
Packaging: The devices are provided in a 7 x 17 Bump Ball Grid Array Package, conforming to JEDEC standards. This packaging aids in standardized integration and testing processes.
Description
These SRAM chips are engineered for synchronous operation, allowing for high-speed access and compatibility with system-level timing requirements. Differential K clocks lead to the precise initiation of read/write operations. All significant operations, such as address input and data writing, are self-timed and synchronized to the rising edge of the clock. This creates a streamlined and efficient timing mechanism for pipeline processing.
The SRAMs are designed to work with a single power supply voltage and to interface seamlessly with HSTL I/O, making them suitable for various applications requiring fast, reliable, and power-efficient memory storage with wide input/output options.
Manual:
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