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8Mb (256Kx36 & 512×18) and 4Mb (128Kx36 & 256Kx18) SRAM

8mb-256kx36-512x18-and-4mb-128kx36-256kx18-sram.pdf

This datasheet describes synchronous pipeline mode, high-performance CMOS static random access memories (SRAMs) with 8Mb (256Kx36 & 512×18) and 4Mb (128Kx36 & 256Kx18) organizations.

The SRAMs feature registered outputs, common I/O, and asynchronous output enable. They operate on a single +2.5V power supply and are compatible with HSTL I/O interfaces.

Key Features:

• 0.25 micron CMOS technology

• Synchronous pipeline mode of operation with self-timed late write

• Single differential HSTL clock

• Boundary scan using limited set of JTAG 1149.1 functions

• Byte write capability and global write enable

• 7 x 17 Bump Ball Grid Array package with SRAM JEDEC standard pinout and boundary scan order

Manual:

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