64Kx16 Bit High-Speed CMOS Static RAM(5.0V Operating)

Category: Electronics, Memory ICS, Samsung Semiconductor Division

Overview of K6R1016C1C CMOS SRAM

The datasheet details the specifications of the K6R1016C1C CMOS SRAM, a high-performance memory chip providing a storage capacity of 64Kx16 bits. Designed for high-speed applications, the device operates at a nominal power supply voltage of 5.0V. It is engineered to function across both commercial and industrial temperature ranges, ensuring reliability in various environments.

Revision History

The datasheet chronicles the evolution of the K6R1016C1C memory chip through several revisions, indicating improvements and changes made over time:

Rev. 0.0 (Aug. 5, 1998) – Initial release with preliminary specifications.
Rev. 1.0 (Sep. 7, 1998) – Adjustment to DC characteristics, with increased current consumption specified for various speed grades from the previous 90mA, 88mA, and 85mA to revised ratings of 95mA, 93mA, and 90mA.
Rev. 2.0 (Sep. 17, 1998) – Introduction of a 48-fine pitch Ball Grid Array (BGA) packaging option.
Rev. 2.1 (Nov. 5, 1998) – Change in the device part name systematics for the FP-BGA packaging.
Rev. 2.2 (Dec. 10, 1998) – Alteration of the device ball nomenclature for the FP-BGA.
Rev. 3.0 (Mar. 3, 1999) – Addition of data retention characteristics to the specifications.
Rev. 3.1 (Mar. 3, 2000) – Inclusion of a new part with a 10 ns speed option.
Rev. 4.0 (Sep. 24, 2001) – Discontinuation of the 20 ns speed bin from the product offerings.

The document is published by SAMSUNG Electronics, which holds the right to modify specifications of the device. The company commits to evaluating inquiries and providing responses regarding the device parameters.

The final revision mentioned in the provided content is Rev. 4.0, dated September 2001. Customers are advised to contact their local SAMSUNG office or headquarters for support and any questions related to the SRAM device.