512Mb B-die DDR SDRAM Specification – Samsung Electronics

Category: Electronics, Memory ICS, Samsung Semiconductor Division

Overview of 512Mb B-die DDR SDRAM Datasheet

This datasheet provides detailed information about Samsung’s 512Mb B-die DDR SDRAM, offered in configurations of x4, x8, and x16. This document, with revision number 1.3 dated June 2005, outlines the specifications, features, and operating conditions of the memory product housed in a 66-pin TSOP-II package. Potential users and system designers are the target audience for this datasheet.

Key Highlights and Usage Warning

Key features of Samsung’s DDR SDRAM include its double data rate architecture, allowing for high-speed data transfer. The product’s configuration varieties can accommodate different applications and system requirements. It is crucial to note that Samsung explicitly states that these products are not intended for high-risk applications such as life support or military use. Additionally, the document does not grant any license to Samsung’s intellectual property and disclaims any warranty, emphasizing the product’s “as is” status and the rights for specifications to change without notice.

Contents and Organization of the Datasheet

Within the contents section of the datasheet, a comprehensive outline is provided, which includes:

Key Features: Details on the primary attributes of the memory chip.
Ordering Information: Instructions on how to order specific configurations of the DDR SDRAM.
Operating Frequencies: Information on the range of operational clock frequencies.
Pin Description: A detailed look at the function of each pin on the 66 TSOP-II package.
Physical Package Dimensions: Diagrams and measurements outlining the physical characteristics of the memory chips.
Block Diagram: A visual representation of memory arrangement, such as distribution across banks.
Function Description: Explanations of the I/O operations and performance-related detail.
Subsequent sections extend to operational conditions, capacitive properties, power consumption specifications (IDD Specs), and AC Timing Parameters.

Final Considerations

For engineers and purchasers, the document underlines the necessity to reach out to Samsung for additional product updates or information, as the specifications may change after the knowledge cutoff of the datasheet. Ultimately, this summary underpins the 512Mb B-die DDR SDRAM as a key component for applications requiring expedient data processing without life-critical or national security implications.