This datasheet describes the 2Gb DDR3 Synchronous DRAM, a 2,147,483,648-bit CMOS memory device suitable for main memory applications requiring high memory density and bandwidth.
The device features fully synchronous operations, internal pipelining, and 8-bit prefetching to achieve high bandwidth. It also supports programmable CAS latency, additive latency, and CAS Write latency.
Key Features:
Operating Frequency: Up to 2133 Mbps
Temperature Range: Commercial (0°C to 85°C) and Industrial (-40°C to 95°C)
Package: 78-ball FBGA (x8) and 96-ball FBGA (x16)
Power Consumption: Normal and Low Power options available
Ordering Information:
Part numbers and configurations are provided for different temperature ranges, power consumption, and package types.
Manual:
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