The HSTQ2G83BFR and HSTQ2G63BFR are 2Gb DDR3 SDRAMs, suitable for main memory applications requiring high memory density and bandwidth.
They offer fully synchronous operations, with addresses and control inputs latched on the rising edges of the clock, and data paths internally pipelined and 8-bit prefetched for high bandwidth.
Key Features:
Differential clock inputs, differential data strobe, and on-chip DLL for aligning DQ, DQS, and DQS transitions with CK transitions.
Programmable CAS latency, additive latency, and CAS write latency, as well as burst length and BL switch on the fly.
Auto Self Refresh, JEDEC standard 82ball FBGA (x8), and 96ball FBGA (xl6) packages, with driver strength selection and dynamic on-die termination.
RoHS compliant, with commercial and industrial temperature ranges, and low power consumption options.
Manual:
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