This datasheet describes the 1NITB9A and 1N36TOA series of 12 Amp medium power silicon rectifier diodes.
Key Features
Voltage ratings from 50 to 1,000 volts, high surge capability, low thermal impedance, and high temperature rating.
Applications
Can be supplied as JAN and JAN-TX devices in accordance with MIL S-19500/260.
Case style and dimensions conform to JEDEC Outline DO-203A4 (DO-4).
Manual:
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