This datasheet describes the KIK8GO8UOM, a 8G-bit NAND Flash Memory device offered in 1G x 8bit, 2G x 8bit, and 4G x 8bit configurations.
Key Features:
- Command/Address/Data Multiplexed I/O Port
- Hardware Data Protection
- Program/Erase Lockout During Power Transitions
- Reliable CMOS Floating-Gate Technology
- Endurance: 100K Program/Erase Cycles (with 1bit/512Byte ECC)
- Data Retention: 10 Years
The device is available in a 48-pin TSOP1 package and operates with a voltage supply of 2.70V to 3.60V.
Organization
The memory cell array is organized as (1G x 32M) x 8bit, with a data register of (2K + 64) x 8bit.
Performance
The device offers fast write cycle times, with a typical page program time of 200us and a typical block erase time of 1.5ms.
Manual:
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