Overview
The H11GIM and H11GZM are high voltage photodarlington-type optocouplers with a gallium arsenide infrared emitting diode coupled with a silicon darlington connected phototransistor.
Key Features
High BVCEo (100 V minimum for H11GIM and 80 V minimum for H11GZM), high sensitivity to low input current (minimum 500% CTR at I = 1 mA), and low leakage current at elevated temperature (maximum 100 nA at 80°C).
Safety and regulatory approvals include UL1577, 4170 VACRMS, and 850 V peak working insulation voltage.
Applications
Telephone ring detector, low input TTL interface, power supply isolation, and replacement for pulse transformers.
Manual:
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Pricing & Distributors: https://www.datasheets360.com/part/detail/h11g1sr2m/-4884069059109253575/
