renesas-hat2139h-silicon-n-channel-power-mos-fet-power-switching.pdf

This datasheet describes the RENESAS HAT2139H, a silicon N-channel power MOS FET designed for power switching applications.

Key Features:

  • Capable of 7 V gate drive
  • Low drive current
  • High density mounting
  • Low on-resistance (Rpston) of 9 mΩ typ. (at VGs = 10 V)

Absolute Maximum Ratings

The device has a maximum drain to source voltage of 40 V, gate to source voltage of ±20 V, and drain current of 20 A.

Electrical Characteristics

The device has a drain to source breakdown voltage of 40 V, gate to source breakdown voltage of ±20 V, and a static drain to source on-state resistance of 9 mΩ typ.

Manual:

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