The SCHOTTKY Barrier devices are monolithic Schottky diodes designed for high-frequency applications up to 26.5 GHz.
These devices feature low capacitance, high and ultra-high barrier heights, and excellent conversion loss performance.
Applications
Suitable for various circuit applications, including double balanced RF mixers, high-speed switching, and modulation.
Monolithic beamlead design minimizes parasitic inductance and capacitance, ensuring repeatable performance through Ka band.
Key Features
Barrier heights ranging from 600 mV to 1300 mV per leg.
Low junction capacitances (as low as 0.06 pF).
Available in Ultra-Low, Medium, High, and Ultra-High drive levels.
Manual:
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