Overview
This datasheet describes a DRAM (Dynamic Random Access Memory) die, specifically the NESIEE UNUB_TSME D NT coPYR GhT 20.
Key Features
The device has a scale of 1.27 MAX and 0.27 MAX, with a percentage of carted layout holes.
It also features a header type mark with a scale of 6:1, and a contact number of 33.02.
The material notes indicate that the device is made of a thermoplastic material with a high temperature rating, and the contacts are made of phosphor bronze.
The datasheet also includes information on the device’s dimensions, tolerances, and packaging.
Manual:
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