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DRAM DIE, NESIEE, UNUB_TSME, D, NT, coPYR, GhT, 20

dram-die-nesiee-unubtsme-d-nt-copyr-ght-20.pdf

Overview

This datasheet describes a DRAM (Dynamic Random Access Memory) die, specifically the NESIEE UNUB_TSME D NT coPYR GhT 20.

Key Features

The device has a scale of 1.27 MAX and 0.27 MAX, with a percentage of carted layout holes.

It also features a header type mark with a scale of 6:1, and a contact number of 33.02.

The material notes indicate that the device is made of a thermoplastic material with a high temperature rating, and the contacts are made of phosphor bronze.

The datasheet also includes information on the device’s dimensions, tolerances, and packaging.

Manual:

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Pricing & Distributors: https://www.datasheets360.com/part/detail/0-281740-8/-5559134777770513884/

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