These Silicon Epitaxial Planar Diodes are designed for ultra high speed switching applications, housed in the SC-59 package for low power surface mount applications.
They feature fast trr (< 3.0 ns) and low CD (< 2.0 pF), making them suitable for high-speed switching.
Key Characteristics
Maximum ratings include a reverse voltage of 40/80 V, forward current of 100 mA, and peak forward surge current of 500 mA.
The devices have a power dissipation of 200 mW and a junction temperature of 150°C.
Electrical Characteristics
Reverse voltage leakage current is typically 0.1 μAdc, and forward voltage is typically 1.2 Vdc.
Diode capacitance is typically 2.0 pF, and reverse recovery time is typically 3.0 ns.
Manual:
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