SM-8 BIPOLAR TRANSISTOR H-BRIDGE ZHB6790 – PRELIMINARY DATA SHEET

Category: DIODES Incorporated, Electronics, Transistors

Overview

The ZHB6790 is an SM-8 Bipolar Transistor H-Bridge, encapsulated in a compact package designed for a variety of applications. Highlighting its low on-state losses and minimal drive requirements, this device is capable of operating with a supply voltage of up to 40V and can handle a continuous collector current of 2 Amps.

Key Features

Compact package for space-sensitive applications
Low on-state losses to increase efficiency
Low drive requirements making it easy to interface with control circuits
Ability to operate with a supply voltage up to 40V
2 Amp continuous rating for robust performance

Part Marking and Packaging

The transistor’s part marking is ZHB6790, and it comes in an 8 Lead SOT223 package, which is known for its small size and suitability for high-density PCB layouts.

Absolute Maximum Ratings

The datasheet outlines maximum ratings for the device that should not be exceeded to avoid damage. These include:

Collector-Base Voltage (VCBO): 50V
Collector-Emitter Voltage (VCEO): 40V
Emitter-Base Voltage (VEBO): NPNs: 50V, PNPs: -50V
Peak Pulse Current (ICM): 40A
Continuous Collector Current is rated at 2A.
Operating and Storage Temperature Range: -55°C to +150°C.

Schematic and Connection Diagrams

The preliminary data sheet includes schematic and connection diagrams that provide a visual representation of the internal configuration of the transistor H-bridge. It illustrates the interconnection of NPN and PNP transistors within the package and the external pin configurations.

Usage

The ZHB6790 is positioned for use in electronic circuits where an H-bridge configuration is necessary, which is often the case in motor control circuits, power inverters, and other applications that require bidirectional control of current.

As a preliminary data sheet, the information provided is subject to change, and users should consult the latest version before finalizing a design.