256Mb J-die DDR SDRAM Specification

Category: Electronics, Memory ICS, Samsung Semiconductor Division

Overview

The datasheet titled “256Mb J-die DDR SDRAM Specification” outlines the technical specifications and features for the Samsung K4H560438J, K4H560838J, K4H561638J DDR SDRAM memory modules. Designed with a 66-pin Thin Small Outline Package (TSOP-II), these modules comply with RoHS directives, being lead-free and halogen-free. Presented information is intended to guide users and product developers but is subject to change without prior notice. Samsung disclaims any warranty and advises against using these products in high-risk applications where a failure could cause life-threatening situations or significant harm.

Key Features and Contents

Key Features of the SDRAM include diverse memory densities and configurations for flexibility in applications. The Table of Contents indicates the extensive range of technical specifics provided in the datasheet, such as Operating Frequencies, Pin Description, and Package Physical Dimension. It also includes a Block Diagram depicting layouts for 4Mb x 16 I/O x 4 banks and others, an essential guide for designers to understand the memory’s architecture.

Detailed functional descriptions and a Command Truth Table give comprehensive operational insights, while sections dedicated to General Description and Absolute Maximum Ratings ensure users are aware of safe usage parameters. Electrical characteristics are extensively covered, with sections discussing DC Operating Conditions, Input/Output Capacitance, and IDD Specifications, assuring engineers have necessary data for designing power supply and interfacing circuits.

Moreover, the datasheet includes AC Operating Conditions and various overshoot/undershoot specifications for control and data pins, vital for maintaining signal integrity. Timing parameters, a critical aspect for ensuring compatibility with different systems, are elaborated in the AC Timing Parameters & Specifications section. These details support system designers in achieving optimal system performance.

Lastly, the document provides additional notes on component and system considerations, along with IBIS/IV Characteristics, instrumental for simulating signal behaviors in high-speed digital designs. These insights ensure that designers fully understand the operational characteristics and system implications when incorporating the 256Mb J-die DDR SDRAM into their designs.

Disclaimer and Contact Information

The information furnished by Samsung is “as is” and without warranty of any kind. The document cautions against the use of the SDRAM modules in life-critical applications and highlights Samsung’s retention of rights to modify products or specifications without notice. For more information or updates, Samsung recommends contacting the nearest Samsung representative.

This summary offers a snapshot of the datasheet content for the 256Mb J-die DDR SDRAM, guiding potential users and engineers through the specifications and crucial considerations associated with the memory modules.